PART |
Description |
Maker |
2SA1648 2SA1648-Z 2SA1648-Z-T2 2SA1648-Z-T1 2SA164 |
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP epitaxial type silicon transistor
|
NEC Corp.
|
UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
UP04601 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ |
Silicon PNP epitaxial planar type power transistor Silicon PNP epitaxial planar type(For low-frequency power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
PANASONIC[Panasonic Semiconductor] PANASONIC CORP
|
2SA1790 2SC4626 |
Silicon PNP epitaxial planer type 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
2SB1321A |
Silicon PNP epitaxial planer type 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp. Panasonic Semiconductor
|
RN4602 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
|
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
2SA1235 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Corporation
|